В журнале ChemPhysChem (IF 2,3) опубликована статья, соавторами которой являются сотрудники НИОХ к.х.н. Д.С. Одинцов (нс, ЛЭАСМ), А.А. Гисматулин (мнс, ЛЭАСМ), к.х.н. И.К. Шундрина (снс, ЛЭАСМ), к.х.н. А.Д. Бухтоярова (нс, ЛОСМ), к.х.н. И.А. Оськина (снс, ЛГетС) и д.х.н. Л.А. Шундрин (завлаб ЛЭАСМ). В числе соавторов статьи - почётный доктор НИОХ Jens Beckmann (Universität Bremen, Institute for Inorganic Chemistry and Crystallography of Bremen University, Bremen, GERMANY).
Methyl Methacrylate Copolymer with Pendant Thioxanthenone Groups as Active Layer for Resistive Memory Devices
Danila S. Odintsov, Andrey A. Gismatulin, Inna K. Shundrina, Alexandra D. Buktoyarova, Irina A. Os'kina, Jens Beckmann, Ivan A. Azarov, Ekaterina V. Dementeva, Leonid A Shundrin, Vladimir A. Gritsenko
ChemPhysChem, V. 25, N 21, November 4, 2024, e202400266
First published: 28 June 2024
https://doi.org/10.1002/cphc.202400266
Abstract
An electro-active copolymer of methyl methacrylate and 2-((4-acroylpiperazine-1-yl)methyl)-9H-thioxanthene-9-one (poly(MMA-co-ThS)) was synthesized by radical polymerization. The copolymer has good solubility in most organic solvents, thermal stability up to 282 °C and excellent ability to form thin films on silicon wafers. Poly(MMA-co-ThS) films exhibited an electrochemical and electrochromic activity resulting in the formation of long-lived radical anion states of pendant thioxanthone groups inside the film. These states exhibit optical transitions in the visible region as a broad optical absorption band, 500 < l < 900 nm (1.38<Wopt(ThS)<2.48 eV) with a maximum at lmax = 675 nm (1.84 eV). Using temperature measurements of the current-voltage characteristics of p-Si(100)/poly(MMA-co-ThS)/Al devices, it was shown that the charge transport in the film occurs by a multiphonon mechanism, which is quantitatively described by the Nasyrov-Gritsenko model of phonon-assisted tunneling between traps. The value of the optical transition energy of the trap, determined by the Nasyrov-Gritsenko model, Wopt = 1.8 eV, is in a good agreement with Wopt(ThS), confirming the nature of the traps as 9H-thioxanthen-9-one structures. The n++Si(100)/poly(MMA-co-ThS)/Al memory device exhibited a memristive effect (reversible ON/OFF switching of the device) with an initial “forming” cycle followed by repetitive memory cycles characterized by bipolar switching.